Dim Lighting Co. Essay Example

Dim Lighting Co. Essay Case Solution: The Dim Lighting Co. I. Problems: A. Macro 1. Will Dim Lighting be reactive? 2. Will Dim Lighting be proactive? B. Micro 1. Will Jim West be influenced by thoughts of what a second year of un-obtained targets will do to his career in making this budget decision? 2. West feels threatened every time Spinks does not receive his demands or â€Å"wish list. † II. Causes: 1. Previous unprofitable year. 2. Spinks’ past history of leaving a company that â€Å"lacked creativity and innovation†. III. Systems affected: . Structural – the structure is a traditional functional structure. This may not encourage the development of new products and ideas. 2. Psychosocial – other departments feel threatened by Spinks. Also, Jim West feels he is under pressure to improve the profit margins immediately. 3. Technical – both the production manager and Spinks want money to upgrade technical aspects of the company. 4. Managerial – West feels c aught between being innovative and trying to improve the bottom line immediately. 5. Goals and values – corporate headquarters does not seem to value risk taking and moving into new projects. If their rejection of the lighting proposal is indicative of their decisions, the company as a whole may become entrenched in old technology. IV. Alternatives: 1. Before making a budget decision, West should contact corporate offices to see if additional funds are available for RD. Spinks’ project would have a long-term effect on entire industry and possibly the parent company would contribute to the RD project. . If additional funds are unavailable, the budget committee needs to make some compromises and come to a consensus-it should not be an all-or-nothing proposition. Funds should be allocated for both RD and for upgrading essential equipment. 3. West should also ask the accountant, Preston, to make a three-tiered analysis of the project: (1) best-case scenario, (2) worst-case scenario, and (3) probable scenario. 4. West also needs to resolve his mixed feelings about the possibility of Spinks leaving. We will write a custom essay sample on Dim Lighting Co. specifically for you for only $16.38 $13.9/page Order now We will write a custom essay sample on Dim Lighting Co. specifically for you FOR ONLY $16.38 $13.9/page Hire Writer We will write a custom essay sample on Dim Lighting Co. specifically for you FOR ONLY $16.38 $13.9/page Hire Writer West needs to approach Spinks, praising him for what he has accomplished in the RD department and asking him to help spread that high degree of morale across the company. West needs to make Spinks an ally rather than a potential deserter. V. Recommendations: 1. First try to obtain additional funds from parent company. 2. If additions are not available, obtain a consensus from the budget committee. Compromises will have to be made on length of time for RD projects, what equipment is needed, etc.

Integrative Bargaining Example

Integrative Bargaining Example Integrative Bargaining – Coursework Example Integrative Bargaining al Affiliation) Integrative Bargaining Distributive and integrative negotiation skills are broad categories of negotiation skills. Distributive negotiation/bargaining occurs when the parties involved compete for fixed resources and thus a gain by one party usually results in a loss by the other party, hence the name distributive bargaining, as both parties seek to distribute the resources between them (Carrell & Heavrin, 2008). This type of negotiation has both parties establishing a start point and both gradually making concessions until they reach an agreement (Notini, 2008). It usually occurs where there is no relationship between the parties and they do not intend to establish one. Integrative bargaining however seeks to improve the outcome of the negotiation by bringing together/integrating the interests of both parties to the negotiation process (Carrell & Heavrin, 2008). Both parties are completely honest and do not just think of their interest. One part y may be willing to make a compromise if the solution will benefit both of them. This type of negotiation occurs where the parties have a relationship that they are willing to keep (Notini, 2008).Negotiation researcher Leigh Thompson came up with a pyramid that describes agreements that could arise from the process of integrated negotiations (Carrell & Heavrin, 2008). There are three levels of the Thompsons Pyramid Model. Level 1 is the lowest in satisfaction to both parties and level three having an outcome that benefits both parties fully. Beyond level 3, one party will lose something while the other gains (Carrell & Heavrin, 2008). Level three, Parietal Optimal derives the best outcomes to both parties. Level two, Superior Agreement creates a satiation of value addition to both parties in relation to the agreements achieved (Carrell & Heavrin, 2008). In Level 1, Agreement, the results exceed the expectations of both parties in terms of ZOPA, which is the zone of possible agreemen t (Notini, 2008).ReferencesCarrell, M.R.., & Heavrin, C. (2008). Negotiating essentials: Theory, skills, and practices. Upper Saddle, NJ: Pearson Prentice Hall.Notini, J. (2008). Negotiation Essentials. Retrieved from http://postdocs.stanford.edu/education/Scientific%20Management%20Series/2009_Negotiation_Skills.pdf

Retail industry in last ten years Research Paper

Retail industry in last ten years - Research Paper Example The paper also analyses the role played by the mergers and acquisitions which had led to successful operation of the few big organization in the retail industry. Changes in the retail market: The general overview regarding the retail market has changed considerably over the last ten years. Originally the retail market signified a clothing market which primarily involved a made to order market, but in recent time, the dimension changed and it emerged as a ready to wear market. The standard practice of the retail market involved customers flipping through the product catalogue, selecting the color, size, and the texture of the clothing which they desired to purchase and then the customers had to wait for the sewing process of the clothes to be complete before they received the delivery of the final product. However in the era of 21stcentury, the multinational organizations have stepped in the market and the outlook of the retail market changed with large sized stores where the customer s were offered various products under a single roof. The retail industry in the present times comprises of products other than clothing and is primarily segregated into two segments which are hard and soft. Under the hard segment, the goods include electronics, appliances, and furniture whereas the soft segment deals with clothing, apparels and products of fabric. The increase in product under the retail chain has also strengthened the competition between the top organizations in the retail sector. Another major change which has evolved in the retail market is the conversion of the departmental stores into big apparels. Before 1999, the departmental stores in US were facing a major problem in the business due to loss of sales and in order to revive their market condition, the change in strategies was adopted by the store owners. The period from 1999 to 2005 witnessed a major downfall in the sales of the departmental stores whereas; the sales figure in the warehouse chains and the cl othing stores took a major leap. The cause of the failure of department stores was many. The change in the lifestyle of the people was one of the primary causes. The lifestyle of the people living in suburbs encouraged for the creation of the malls. Consumers preferred to shop in the areas near the localities where they lived and the down town departmental stores were soon out of fashion. The shopping malls saw the emergence of big brands under the same place and were successful in gaining the attention of the customers. The overall fashion trends of the customers were also changed dramatically and the branded retailers were successful in addressing the needs of the customers at an affordable price. The retail industry witnessed a change in the modes of payment also in the past decade. The customers of the 21st century prefer to opt for non-cash payment and the payment by debit and credit card has made shopping more easy for the customers. The number of payment by cards in the retai l sector rose to 5.3 million in the year 2003. The advancement of internet also has changed the mode of operation of the big organization in the retail sector (Plunkett, 2008). Over the last decade most of the reputed organizations have implemented the online selling techniques by the improvement of the web portal. The websites of the respective organizations are flooded with product information and the customers can easily purchase the product of their choice by making an e-payment and the products

The Ecosystem Inside Essay Example | Topics and Well Written Essays - 500 words

The Ecosystem Inside - Essay Example The microbiome in the human gut remains to be healthy only as long as the rest of the species within are also healthy, as is the case with an actual ecological system. A balance must be maintained for everything to function as it should to provide the best, and healthiest, results. While some diseases are caused by a single organism that produces an infection, there are many diseases that are caused simply due to an imbalance in the organisms that transmit with the host. Using premature infants, a team of doctors, ecologists, and researchers set out to determine which species thrive the most in the early stages of the human microbiome, and what part they play in critical diseases that effect infants and people later in life. Many people connect microbes with disease, and while this may be the case in some situations, microbes are more commonly connected with health. For example, every person has E. coli in them, but not everyone is effected by it. It all comes down to the balance of the microbe. A greater healthier population of the microbes can throw off the unhealthy population, proving to be beneficial to the health of the human being.

Public presentation thru Communication Essay Example | Topics and Well Written Essays - 500 words

Public presentation thru Communication - Essay Example Public speaking can be a powerful tool to use for purposes such as motivation, influence, persuasion, or simply ethos. Becoming good at public presentations entails a number of principles, that one needs to grasp. It is important to know that presentation goes hand in hand with communication skills. Good communication skills lead to a nice public presentation. One needs to put into practice some of the principles of effective communication skills if he or she has to come out as a good orator. For an effective public presentation, one needs to plan effectively the presentation. Planning entail was writing down an objective statement of what one needs to achieve because of the presentation. The objective statement usually answers the question â€Å"who is my audience and what is the purpose of the talk.† Next, one needs to write down what he thinks he will tell the audience. It is crucial to note that public speaking not only share information but also move people’s minds and hearts and provokes them into changing their behavior. Additionally, research on the topic of discussion is also very important. The second principle entails one overcoming his or her public speaking fear. Most people become nervous at the thought of standing before people and presenting a given speech. In America, for instance 43% of adults rank public speaking as a major block bringing about fear compared to death. Being bold during a public presentation enhances information flow and the way one influences the audience’s emotional balance. Overcoming this fear is a choice that one can decide to take. Confidence eventually leads to an improved public presentation. Finally, it is crucial to note that a practice makes perfect. By so doing, one boosts his or her communication skills and the ability to stand before the public and offer a good presentation. Continuous repletion of something until it becomes second nature is important in ensuring that perfection is

Memristor Spice Model For Designing Memristor Circuits Economics Essay

Memristor Spice Model For Designing Memristor Circuits Economics Essay Memristors are novel electronic devices, a device that can be used and give a great advantage in many applications such as memory, logic, neuromorphic systems and so on. A computer model of the memristor would be a useful tool to analysis circuit behavior to help in develops application of this memristor as passive circuit element via simulation. In this paper, we incorporate a memristor SPICE for designing memristor circuit which is more focusing on non-linear model and analog circuits. SPICE model would be appropriate way to describe real device operation. We incorporating the memristor with various window functions that have been proposed in non linear ion drift memristor devices. In investigating and characterizing the physical electronic and behavioral properties of memristor devices, the circuit analysis of the proposed memristor models are then been studied. The simulation output should have a current-voltage hysteresis curve, which looks like bow tie. The loops map the switch ing behavior of the device. Then, we come out with a simple analog circuit which in this case we construct a simple integrator op-amp and differentiator op-amp circuit and make comparison between memristor implemented circuit and normal circuit. The research verifies the proposed memristor model, the possibilities of implementing memristor model and the advantage implementing the memristor in analog circuit. Keywords memristor, SPICE model, non linear, window functions, analog circuit. Introduction Memristor is the contraction of memory resistor which is a passive device that provides a functional relation between charge and flux. It is a two-terminal circuit element in which the flux between the two terminals is a function of the amount of electric charge that has passed through the device [1]. A memristor is said to be charge-controlled if the relation between flux and charge is expressed as a function of electric charge and it is said to be flux-controlled if the relation between flux and charge is expressed as a function of the flux linkage [2]. In 1971, Leon Chua proposed that there should be a fourth fundamental passive circuit element to create a mathematical relationship between electric charge and magnetic flux which he called the memristor which is short for memory resistor [2]. The current is defined as the time derivative of the charge. The voltage is defined as the time derivative of the flux according the faraday law. A resistor is defined by the relationship between voltage and current dv=Rdi, the capacitor is defined by the relationship between charge and voltage dq=Cdv, the inductor is defined by the relationship between flux and current dà Ã¢â‚¬  =Ldi. The fourth fundamental circuit element completes the symmetry of the relation between charge and magnetic flux dà Ã¢â‚¬  =Mdq. Table 1 show the relationship between the fundamental circuit element. Basic two terminal devices Equation Relationship between fundamental circuit element Resistor,R dv=Rdi v and i Capacitor,C dq=Cdv v and q Inductor,L dà Ã¢â‚¬  =Ldi i and à Ã¢â‚¬   Memristor,M dà Ã¢â‚¬  =Mdq q and à Ã¢â‚¬   Table 1: The four fundamental element (resistor, capacitor, inductor and memristor). In 2008, Stanley Williams and his team at Hewlett Packard had succesfully fabricated the first memristor in physical device form which is a long wait from Leon Chua discovery in 1971 [3]. Memristance is a property of memristor. When the charge flows in one direction through a circuit, the resistances of the memristor increase. The resistance decreases when the charge flows in the opposite direction in the circuit. If the applied voltage is turned off, thus stopping the flow of charge and the memristor remembers the last resistance that it had [1]. In HP memristor model, to create a memristor, they used a very thin film of titanium dioxide (TiO2). The thin film is then sandwiched between the two platinum (Pt) contacts. One side of TiO2 is doped with oxygen vacancies denoted as TiO2-x which x is usually 0.05. The oxygen vacancies are positively charged ion and make it conductive, thus it behaves as a semiconductor. Another side of the TiO2 junction is undoped. The undoped region has insulating properties. The device established by HP is shown in Figure 1 [3]. Figure 1: Memristor model adapt from [3]. When a positive voltage is applied, the positively charged oxygen vacancies in the doped TiO2-x layer are repelled and moving them towards to the undoped TiO2 layer. When the boundary between the two materials moves, the percentage of the conducting TiO2-x layer is increase. Thus, the conductivity of the whole device increases. When a negative voltage is applied, the positively charged oxygen vacancies are attracted and pulling them out of TiO2 layer. This increases the amount of insulating TiO2, thus increasing the resistivity of the whole device. When the voltage is turned off, the oxygen vacancies do not move. The boundary between the two titanium dioxide layers is frozen. This is how the memristor remembers the voltage last applied [1]. Methodology Our aim in this research is to provide a simulation program adequately simulates and can be used as a circuit element in design work. To model the electrical characteristics of the memristor, SPICE would be appropriate way to describe real device operation [4]. Moreover, using the model as a sub-circuit can highly guarantee a reasonable high flexibility and scalability features [5]. We use LTSPICE to create a memristor model and design new symbol of the memristor circuit for the simulation because LTSPICE is much easier to handle compared to others. On the other hand, LTSPICE is a freeware and it will give a great advantage to the students in doing research for this newly devices. We use SPICE model that been adapt from [6] and we made some adjustment so we can use it for several window functions that has been proposed for non linear ion drift model. The SPICE model is created based on the mathematical model of the HP Labs memristor. After the memristor has been modeled, we first studied the difference between proposed memristor and then we will start design and implement the memristor with an analog circuit. We also investigate and made a comparison between the memristor circuit with analog circuit to see the difference and study the behavior of the circuits. Model Of The Memristor from HP Labs In the model of a memristor presented here, there is a thin semiconductor film that has two regions, one with a high concentration of dopant that behaves like a low resistance called RON and the other with a low dopant concentration with higher resistance called ROFF [3]. The film is sandwiched between two metal contacts as in figure 1. The total resistance of the memristor, RMEM, is a sum of the resistances of the doped and undoped regions, w is the width of the doped region and D is the total length of the TiO2 layer. ROFF and RON will be the limit values of the memristor resistance for w=0 and w=D. The ratio of the two resistances is usually given as 102 103. (1) (2) From the ohms law relation between the memristor voltages and current, we get (3) Then, we insert (1) into (3). The voltage v(t) across the device will move the boundary between the two regions causing the charged dopants to drift. So, there is a drift ion mobility  µv in the device. The change of the boundary is denoted as in (5). (4) (5) To get x(t), we then integrates the right side of equation (5) which then yields the following formula (6) By inserting equation (6) into equation (4) and since usually RON (7) Where  µv is the average drift velocity and has the units cm2/sV, D is the thickness of titanium-dioxide film ROFF and RON are on-state and off-state resistances and q(t) is the total charge passing through the memristor device. Non Linear Ion Drift Model Even a small voltage across the nanodevices will produce a large electric field [7]. This causing the ion boundary position will move in a decidedly non-linear. Nonlinear dopant drift adds nonlinear window function f(x) to the state equation. The window function decreases as the state variables drift speed approaches the boundaries until it reaches zero when reaching either boundaries [8]. The speeds of the movement of the boundary between the doped and undoped regions are depending on several factors. (8) Where  µv is the dopant mobility. The speed of the boundary between the doped and undoped regions decreases gradually to zero at the film edges [1]. We simulate the nonlinear ion drift memristor model with these window function to see the difference and the issue that been faced by them. Window Function Window function is a function of the state variable. Window function forces the bounds of the device and to add nonlinear behavior close to these bounds. In other words, it creates the boundary for the memristor. Any effective window function should therefore fulfill the following conditions [8]: Take into account the boundary conditions at the top and bottom electrodes of the device; Be capable of imposing nonlinear drift over the entire active core of the device; Provide linkage between the linear and nonlinear dopant drift models; Be scalable, meaning a range of fmax(x) can be obtained such that 0 à ¢Ã¢â‚¬ °Ã‚ ¤ fmax(x) à ¢Ã¢â‚¬ °Ã‚ ¤ 1; Utilize a built-in control parameter for adjusting the model. There are several window functions that have been proposed for non-linear model till date which are by Strukov, Joglekar and, Biolek, and Prodromakis. Strukov proposed the following window function [3]. (9) However, as we can see in the figure 2, this window function lacks of flexibility. Figure 2: Plot of Strukov window function. Another window function was proposed by Joglekar [4], which has a control parameter p which is a positive integer. The purpose of having a control parameter as an exponent is to incorporate scalability and flexibility in window function f(x) that describes the dopant kinetics. (10) Figure 3 displays a graphical representation of the window function described by Joglekar for various p parameter (p=1, 5 and 10). This control parameter controls the linearity of the model, where it becomes more linear as p increases. This window function ensures zero drift at the boundaries. From the plotted graph, we noticed that the maximum f(x) value is occurs at the center of the device and zero is obtained at two boundaries. However, a significant liability of this model lies in the fact that if w hits any of the boundaries (w = 0 or w = D) the state of the device cannot be further adjusted. This will be from now on termed as the terminal state problem. Figure 3: Plot of Joglekar window function for p=1, 5 and 10. Then, Biolek proposed another window function that allows the memristor to come back from the terminal state problem. (11) The reversed bias is now should move back the state variable after it reaches either boundary. This feature is described by a current dependent step function, stp(i), which is a part of a new window function f(x) that behaves differently in each voltage bias direction. (12) Figure 4: Plot of Biolek window function for p=1, 5 and 10. Figure 4 displays a graphical representation of the window function described by Biolek for various p parameter (p=1, 5 and 10). When x starts at 0, we noticed that the function equal to 1. As x increase approaching D, the function approaches 0. Once the current reverse the direction, the function immediately switch to 1. As x decrease back to 0, the function also decreases to 0. Biolek window function eliminates convergence issues at the devices boundaries. The last window function for non-linear model is proposed by Prodromakis [8]. (13) Figure 5 displays a graphical representation of the window function described by Prodromakis for various p parameter (p=1, 5 and 10). As we can see, it allows the window function to scale upwards which implies that fmax(x) can take any value within 0 Figure 5: Plot of Prodromakis window function for p=1, 5 and 10. SPICE Model of Memristor Figure 6: Stucture of the SPICE model from [6]. In the above circuit in figure 6, VMEM is the input voltage and Imem is modeled to be the current through the memristor. The flux is calculated by integrating the voltage VMEM and the charge is calculated by integrating the current IMEM. Figure 7: Resistive port of the memristor model. As we can see in figure 7, the circuit is actually referred to total resistor RMEM. RMEM (x) = ROFF -xà ¢Ã‹â€ Ã¢â‚¬  R where à ¢Ã‹â€ Ã¢â‚¬  R= ROFF-RON. ROFF is the resistor in series voltage source whose terminal voltage is controlled by the formula -xà ¢Ã‹â€ Ã¢â‚¬  R. Figure 8: Differential equation modeling of the memristor. Figure 8 shows the differential equation modeling of the memrsitor. It consist a part of the voltage controlled source xà ¢Ã‹â€ Ã¢â‚¬  R and the differential equation from equation (6) which serves as an integrator of the quantities on the right side of the state equation (6) which is to get the value of normalize x. EMEM is the voltage source whose terminal voltage is controlled according to the formula -xà ¢Ã‹â€ Ã¢â‚¬  R. GX is a current source whose current is controlled according to the equation IMEMf(V(x)) where V(x) is the voltage across the capacitor Cx and it models the normalized width x of the doped layer. F(V(x)) is the window function, k is  µvRON/D2 and x0 is the initial voltage of the capacitor.[6]. The relation between memristor current and voltage is modeled as on the basis of RMEM (x) = ROFF -xà ¢Ã‹â€ Ã¢â‚¬  R where à ¢Ã‹â€ Ã¢â‚¬  R= ROFF-RON. The voltage V(x) across the capacitor CX models the normalized width x of the doped layer. The initial state of x is modeled by the initial voltage of the capacitor. The flux is calculated by the time-integral of voltage, and the charge is calculated by the time-integral of current. Result and Discussion All models were simulated in LTSpice using SPICE model that was given in [6], we add new nonlinear window functions that was proposed by prodromakis and strukov to the model and compare all suggested window functions. memristor Figure 9: Memristor circuit. Figure 9 shows configuration of single memristor for measuring the behavior of memristor model in LTSPICE with a sine wave input voltage of 1.2V with 1Hz frequency. The values for the memristor parameters  µv, D, RON, ROFF and RINITIAL are 10-10cm2s-1V-1, 10 nm, 100ohm, 16kohm and 11Kohm. All model are using same window function parameter p=10. C:UsersFadzDesktopresultstrukovstrukov1.png Figure 10: Strukov memristor model voltage, IMEM, RMEM and normalized x. Figure 10 shows the simulation result of memristor SPICE model for Strukov window function of voltage, IMEM, RMEM and normalized x. As we can see, the current of the memristor, IMEM is varying up to approximately 100 µA for maximum of 1.2V voltage applied. The RMEM for this model show that the values are in range of 11kOhm till 12kohm which means the effect of the voltage applied to the memristor only give slightly changes on the value of the memristor. Noticed that when positive voltage is applied, the conductivity of the device increases thus the memristance is decrease. When negative voltage is applied, the resistivity of the device increase thus the memristance is also increase. This verifies the memristive system on the device. In normalize x graph, we also noticed that the normalized x is at higher state in the beginning. Figure 11 shows the I-V characteristic of the devices and the relationship between charge and flux. The charge and flux curve curves confirms the well known fact that there is a one-to-one correspondence between them in spite of the 1-4 hysteresis effect. Strukov memristor shows lack of flexibility of controlling the device. C:UsersFadzDesktopresultstrukovstrukov4.png Figure 11: Strukov memristor model I-V loop hysteresis and relationship of charge and flux. C:UsersFadzDesktopresultjoglekarjoglekar1.png Figure 12: Joglekar memristor model voltage, IMEM, RMEM and normalized x. Joglekar window function seems to be promising as the existence of controlling parameter. Figure 12 shows the simulation result of memristor SPICE model for Joglekar window function of voltage, IMEM, RMEM and normalized x. Same as strukov memristor, when positive voltage is applied, the conductivity of the device increases thus the memristance is decrease. When negative voltage is applied, the resistivity of the device increase thus the memristance is also increase. The current of the memristor, IMEM is varying up to approximately 300 µA for maximum of 1.2V voltage applied. Joglekar window function give higher current compared to others. It shows that the current in the memristor are much easier to move. The RMEM are within range of nearly 0ohm to 11kohm which give full range of value for the memristor. Figure 13 show the I-V hysteresis loop of the devices and the relationship between charge and flux. The switching behavior is much more sensitive on the voltage level than Strukov w indow function. But, in term of stability, Joglekar window function cannot perform for an arbitrary length of time. This failure is caused by the convergence issue where when the memristor reach w=0 or w=D, the state of the device cannot be further adjusted. C:UsersFadzDesktopresultjoglekarjoglekar4.png Figure 13: Joglekar memristor model I-V loop hysteresis and relationship of charge and flux. Biolek window functions are supposed to solve terminal state problem as in literature [4]. It should solve the boundry problem of the terminal state. Figure 14 and 15 shows the simulation result of memristor SPICE model for Biolek window function. The current of the memristor, IMEM is varying up to approximately 220 µA for maximum of 1.2V voltage applied. The RMEM are within range of nearly 1kohm to 11kohm. Figure 15 show the I-V hysteresis loop of the devices and the relationship between charge and flux. From the figures, we observe that the biolek memristor preserve the highly non-linear device characteristic behavior. In addition, Bioleks model allows for general asymmetric I-V device behavior modeling. C:UsersFadzDesktopresultbiolekbiolek1.png Figure 14: Biolek memristor model voltage, IMEM, RMEM and normalized x. C:UsersFadzDesktopresultbiolekbiolek4.png Figure 15: Biolek memristor model I-V loop hysteresis and relationship of charge and flux. Prodromakis window functions are also said to solve the boundry issue. Figure 16 shows the simulation result of memristor SPICE model for Joglekar window function of voltage, IMEM, RMEM and normalized x. The current of the memristor, IMEM is varying up to approximately nearly 180 µA for maximum of 1.2V voltage applied. The RMEM are within range of nearly 3kohm to 11kohm. C:UsersFadzDesktopresultprodromakisprodromakis1.png Figure 16: Prodromakis memristor model voltage, IMEM, RMEM and normalized x. Figure 17 show the I-V hysteresis loop of the devices and the relationship between charge and flux. The hysteresis loop is shown to be asymmetrical while the OFF state of the device is highly non-linear compared with other. C:UsersFadzDesktopresultprodromakisprodromakis4.png Figure 17: Prodromakis memristor model I-V loop hysteresis and relationship of charge and flux. In comparing of I-V characteristic hysteresis loop, as we can see in figure 18, it shows all hysteresis loops for all proposed window functions. By using same parameter we can see the difference in each model. Joglekar window function seems to have a strong memristance compared to others.All models seem to be a good approximation of the measurement of the real memristor produces by HP Labs. But, Prodromakis memristor model satisfies all the prerequisites and improves on the shortcomings of existing models. C:UsersFadzDesktopresultall iv loop hysteresisiv hysteresis loop all.png Figure 18: I-V Hysteresis Loop for all models. C:UsersFadzDesktopresultdiff parameterprodromakis p=1, p=5, p=10.png Figure 19: Prodromakis I-V Hysteresis Loop when p=1, p=5 and p=10. Then, we try change the parameter of p of the model. In this case, we use prodromakis memristor model and change the value of integer p=1, p=5 and p=10 to see the difference. As we can see in figure 19, as the value of p is increase, the hysteresis is shrinking. Similar with changing the parameter p, figure 20 also confirm that the hysteresis shrinks at higher frequencies. C:UsersFadzDesktopresultdiff frequency1hz-5hz.png Figure 20: Prodromakis I-V Hysteresis Loop when frequency f=1Hz, f=2Hz and f=5Hz. In term of power dissipation, as we simulates our results. We can get the value of maximum IMEM for each model. We can calculate the power by using P=IV equation. Table 2 show the maximum power dissipation for each memristor. Memristor model Max IMEM,  µA Power, W Strukov 100 µA 120 µW Joglekar 300  µA 360 µW Biolek 220 µA 264 µW Prodromakis 180  µA 216 µW Table 2: IMEM and Power dissipation for all at the memristor. As in table 2, we can see that the Strukov model give lowest power which is 120 µW while Joglekar model give much higher power dissipation which is about 360 µW compared to the others. We also noticed that as the memristor model is improves, the power become lesser. Prodromakis give quite good power dissipation which is 216 µW as the best windows function and model as till now. In implementing memristor with analog circtuit, we pick a two simple analog circuit to be tested. Figure 21 shows the SPICE topology of the memristor based integrator op amplifier with the input voltage Vp-p=2.4V from -1.2V to 1.2V and C1=25 µF. Using the memristor model that we create earlier with various types of window functions, we see the difference on the simulated result on each model. The values for the memristor parameters are same for all model with uv, D, RON, ROFF and RINITIAL are 10-10cm2s-1V-1, 10nm, 100ohm, 16kohm and 11Kohm. memristor integrator op amp Figure 21: Memristor Implemented Integrator Circuit C:UsersFadzDesktopresultintegrator+ve integrator .png Figure 22: Positive Integrator simulation C:UsersFadzDesktopresultintegrator-ve integrator .png Figure 23: Negative Integrator simulation Figure 22 and 23 shows the simulation result for the implemented memristor integrator op amplifier for positive input and negative input respectively. In this case, we implement prodromakis memristor to the integrator circuit. As we know, the integrator acts like a storage element that produces a  voltage  output which is proportional to the integral of its input voltage with respect to time. The magnitude of the output signal is determined by the length of time a voltage is present at its input as the  current  through the  feedback loop  charges or discharges the  capacitor  as the required  negative feedback  occurs through the capacitor. For positive starting input, we vary the voltage from 1.2V down to -1.2V and going back to 1.2V over time. When positive voltage are applied in the beginning, the output voltage tend to discharge and drop from 0V to negative voltage and charging back to 0V when the input voltage are drop to negative voltage. The output for neg ative voltage applied from starting point give a vice versa result. The charging and discharge are depends the voltage applied over time and the value of the capacitor. We can say the memristor models give quite good result for an integrator. Figure 24: Memristor Implemented Differentiator Circuit. C:UsersFadzDesktopresultdifferentiatordifferentiator.png Figure 25: Saw tooth input of Memristor implemented differentiator op-amp simulation. Figure 25 shows the simulation result for the implemented memristor differentiator op amplifier. We are using prodromakis memristor model for the memristor implementation. As we know, for differentiator op-amp, the magnitude of its output is determined by the rate at which the voltage is applied to its input changes. The faster the input voltage changes, the greater the output voltage becomes. If a saw tooth input signal is applied to the input of the differentiator op-amp a square wave signal will be produced. As we can see in figure 25, the simulation shows a quite good result for differentiator. We also noticed some spikes at the output voltage. Each spikes occurs only occurs the brief moment the saw tooth is changing from one level to the next. The voltage spikes represent a temporary output voltage. Conclusion As a conclusion to this research is that it could bring a new light of familiarization in the integration of memristive components in any kinds of electronic devices that are at nanoscale. It is useful to have a computer model of the memristor as a tool for the analysis of the behavior of the circuits in developing application of this memristor as passive circuit element via simulation. SPICE model will definitely help us to conduct interesting simulation experiments and can be of great importance for such a research in future while the memristor are still hard to fabricate to study the behavior of the circuit. Different models with strong behavior and reason give a lot of benefits in development purpose to create the possibilities of the implementation in an integrated circuit. The possibilities for implementation of the memristor with analog circuit are wide open. Appendix .SUBCKT memristor plus minus PARAMS: + Ron=100 Roff=16K Rinit=11K D=10N uv=10F p=10 *********************************************** * DIFFERENTIAL EQUATION MODELING * *********************************************** Gx 0 x value={ I(Emem)*uv*Ron/D**2*f(V(x),p)} Cx x 0 1 IC={(Roff-Rinit)/(Roff-Ron)} Raux x 0 1T * RESISTIVE PORT OF THE MEMRISTOR * *********************************************** Emem plus aux value={-I(Emem)*V(x)*(Roff-Ron)} Roff aux minus {Roff} *********************************************** *Flux computation* *********************************************** Eflux flux 0 value={SDT(V(plus,minus))} *********************************************** *Charge computation* *********************************************** Echarge charge 0 value={SDT(I(Emem))} *********************************************** * WINDOW FUNCTIONS * FOR NONLINEAR DRIFT MODELING * *********************************************** *proposed by joglekar ;.func f(x,p)={1-(2*x-1)**(2*p)} *proposed by biolek ;.func f(x,i)={1-(x-stp(-i))**(2*p)} *proposed by prodromakis ;.func f(x,p)={1-(((x-0.5)**2)+0.75)**p} *proposed by strukov .func f(x,p)={x-x*2} .ENDS memristor Acknowledgment This paper participates in the IEEE Student Conference Research Development SCORED 2012. The author would like to thank Dr. Wan Fazlida Hanim bte Abdullah for being supervisor in this final year project. The author also would like to thank Universiti Teknologi MARA for funding the research work through the Excellence Fund Grant 600-RMI/ST/DANA 5/3/RIF(360/2012).

Judgments of Conduct in Sense and Sensibility Essay -- Austen Sense Se

Sense and Sensibility is an elegant story that portrays the advantages of the first over the second, as manifested between two sisters of opposing temperaments, one of whom loves wisely and the other passionately. Set in London and its surrounding countryside, the story relates how Elinor, the eldest of Mrs. Dashwood's daughters, and Marianne, the second eldest, share in the agony of tragic love. In the opening of the book, Mrs. Dashwood and her three daughters are forced to move to a new and smaller abode, as her husband's death left her fairly unwealthy. During their transition, the Dashwood's stayed with her step-son and his wife, Mr. and Mrs. John Dashwood. It is there where Elinor, practical and conventional, met and fell in love with Edward Ferrars, Mrs. John Dashwood's brother. One rainy morning, after being settled in their new cottage at Barton, Marianne, emotional and sentimental, was brought home from her walk with a sprained ankle by Willoughby, a dashing young man in his mid-twenties. Marianne immediately fell for Willoughby and he for her and in the following days and weeks he was invariably found at Barton. Another new friend to the family, Colonel Brandon watched the formation of this couple with sadness as he too, had fallen in love with Marianne. To her distress, while on an extended trip to London with friend and neighbor, Mrs. Jennings, Marianne suffered a broken heart upon hearing that Willoughby was concerned for his financial well-being and therefore had bestowed his affections elsewhere. A few months prior to the trip, Elinor learned that Edward was privately engaged to another woman, Lucy, but was bound to secrecy by this woman herself, who was not aware of Elinor's attachment to him. So while tr... ...d, representing sense, tried to relate her imagination and her feelings to her judgment and to the tradition on which society was based. She knew how to govern her feelings as she responded calmly and serenely in the most distressing circumstances. Elinor was more concerned for the feelings of others, but Austen indicates that Elinor suffers a great deal, and her thoughts were often diverted from her own misery to the afflictions of her sister, for whom she had a great deal of compassion. Jane Austen pulled off her aim as a matchmaker and true love triumphed as sense gave way to sensibility and sensibility gave way to sense. In the novel, Austen expresses a universal truth which is the key to her character development-- 'the imaginations of other people will carry them away to form wrong judgments of our conduct, and to decide on it by slight appearances'. Â